NAND FLASH Series
Details
■ Multilevel Cell technology
■ NAND INTERFACE
‐ x8 bus width
■ Supply Voltage
‐ Vcc : 2.7V ~ 3.6V
■ Organization
‐ (16,384+1,664)bytes x 256pages x 1,060blocks x 2plane
‐ Page size : 16,384+1,664bytes
‐ Block size : 256pages x (4M+416K) bytes
‐ Plane size : (1,024blocks + 36 block)/1plane
■ Page Read / Program Time
‐ Random Read Time(tR) : 90 us
‐ Sequential Access (tRC/tWC) : 16ns(Min.)
(Read/Write throughput per pin : up to 50MHz)
‐ Page Program Time : 1.5 ms
■ Block Erase
‐ Block Erase Time : 5 ms (Typ)
■ Operating Current
‐ Page Read : 50 mA (max)
‐ Page Program : 50 mA (max)
‐ Block Erase: 50 mA (max)
‐ Standby (CMOS): 50uA (max)
■ Hardware Data Protection
‐ Program/Erase locked during power transitions
■ Package
‐ T‐SOP :Size : 12x20mm
‐ Pin count : 48
■ NAND INTERFACE
‐ x8 bus width
■ Supply Voltage
‐ Vcc : 2.7V ~ 3.6V
■ Organization
‐ (16,384+1,664)bytes x 256pages x 1,060blocks x 2plane
‐ Page size : 16,384+1,664bytes
‐ Block size : 256pages x (4M+416K) bytes
‐ Plane size : (1,024blocks + 36 block)/1plane
■ Page Read / Program Time
‐ Random Read Time(tR) : 90 us
‐ Sequential Access (tRC/tWC) : 16ns(Min.)
(Read/Write throughput per pin : up to 50MHz)
‐ Page Program Time : 1.5 ms
■ Block Erase
‐ Block Erase Time : 5 ms (Typ)
■ Operating Current
‐ Page Read : 50 mA (max)
‐ Page Program : 50 mA (max)
‐ Block Erase: 50 mA (max)
‐ Standby (CMOS): 50uA (max)
■ Hardware Data Protection
‐ Program/Erase locked during power transitions
■ Package
‐ T‐SOP :Size : 12x20mm
‐ Pin count : 48
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